Synthesis of silicon dioxide film using high-concentration ozone and evaluation of the film quality

Journal of Electronic Materials

Volumn 34, Issue 3, 2005, Pages 240-247

  Koike, Kunihiko ^a   Izumi, Koichi ^a   Nakamura, Sadaki ^a   Inoue, Goichi ^a   Kurokawa, Akira ^b   Ichimura, Shingo ^b  

^a Shiga Technology Center   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ozone; Si; Silicon dioxide

Indexed keywords

CAPACITORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDATION; OZONE; RATE CONSTANTS; SILICA; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

FILM QUALITY; OZONE CONDENSATION; PYROGENIC OXIDATION; SILICON DIOXIDE FILM;

THIN FILMS;

EID: 17144370220     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0210-6     Document Type: Article

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