Low temperature catalytic formation of Si-based metal-oxide-semiconductor structure

Journal of Applied Physics

Volumn 80, Issue 7, 1996, Pages 4124-4128

  Kobayashi, Hikaru ^a   Yuasa, Toshiro ^a   Nakato, Yoshihiro ^a   Yoneda, Kenji ^b   Todokoro, Yoshihiro ^b  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST ACTIVITY; DIFFUSION; HEAT TREATMENT; LOW TEMPERATURE OPERATIONS; OXIDATION; OXIDES; OXYGEN; PLATINUM; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL OXIDE; KINETIC ENERGY; OUTDIFFUSION; OXIDE THICKNESS; SILICIDES;

MOS DEVICES;

EID: 0030270957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363284     Document Type: Article

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