Nitric acid oxidation of 3C-SiC to fabricate MOS diodes with a low leakage current density

Journal of the Electrochemical Society

Volumn 155, Issue 1, 2008, Pages

  Takahashi, Masao ^a,b   Im, Sung Soon ^a   Madani, Mohammad ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN TREATMENT; LEAKAGE CURRENT DENSITY; VALENCE-BAND DISCONTINUITY;

CURRENT DENSITY; HEAT TREATMENT; LEAKAGE CURRENTS; SILICON CARBIDE; VALENCE BANDS;

MOS DEVICES;

EID: 36448961655     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2804769     Document Type: Article

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