Dependence of interface states in the si band gap on oxide atomic density and interfacial roughness

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 24, 1999, Pages 15872-15881

  Kobayashi, Hikaru ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c Texas Instruments Japan Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001084184     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.15872     Document Type: Article

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