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Volumn 87, Issue 3, 2000, Pages 1322-1330

Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon

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EID: 0000269564     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372017     Document Type: Article
Times cited : (248)

References (38)
  • 17
    • 85037503780 scopus 로고    scopus 로고
    • Specifically, the TO frequency was observed to increase with decreasing film thickness below 100 Å, the opposite of (1) the effect seen in chemically etched films studied both herein and by other workers (see Ref. 10), and (2) the effect seen in films grown (see Ref. 38) to thicknesses of 7-25 Å (no chemical etching involved)
    • Specifically, the TO frequency was observed to increase with decreasing film thickness below 100 Å, the opposite of (1) the effect seen in chemically etched films studied both herein and by other workers (see Ref. 10), and (2) the effect seen in films grown (see Ref. 38) to thicknesses of 7-25 Å (no chemical etching involved).
  • 22
    • 85037505336 scopus 로고    scopus 로고
    • To simplify the analysis we have neglected the effects of a parallel-oriented image dipole, under the assumption that the effect of the perpendicular image dipole is significantly stronger
    • To simplify the analysis we have neglected the effects of a parallel-oriented image dipole, under the assumption that the effect of the perpendicular image dipole is significantly stronger.
  • 24
    • 85037517717 scopus 로고    scopus 로고
    • In fact, addition of 1 Å slabs overestimates the effect of the image charge shift in the thinnest slabs, since this analysis does not take into account Coulombic coupling between layers which will weigh the higher frequency components of the LO more heavily than the lower frequency ones
    • In fact, addition of 1 Å slabs overestimates the effect of the image charge shift in the thinnest slabs, since this analysis does not take into account Coulombic coupling between layers which will weigh the higher frequency components of the LO more heavily than the lower frequency ones.
  • 26
    • 85037494124 scopus 로고    scopus 로고
    • 2 films into the central force model (see Ref. 10)
    • 2 films into the central force model (see Ref. 10).
  • 27
    • 85037521317 scopus 로고    scopus 로고
    • note
    • 2, respectively.
  • 37
    • 85037518525 scopus 로고    scopus 로고
    • 2 in the unetched sample yields a thickness of 4.5 Å for the substoichiometric region. While this result is somewhat larger than the amount of suboxide estimated from the thinnest films, it is still less than 6 Å and is therefore consistent with the conclusion that the substoichiometric region is thinner than the thinnest film. Furthermore, the experimental error is expected to be much larger in the thicker film due to the very small amount of suboxide intensity detected in this sample
    • 2 in the unetched sample yields a thickness of 4.5 Å for the substoichiometric region. While this result is somewhat larger than the amount of suboxide estimated from the thinnest films, it is still less than 6 Å and is therefore consistent with the conclusion that the substoichiometric region is thinner than the thinnest film. Furthermore, the experimental error is expected to be much larger in the thicker film due to the very small amount of suboxide intensity detected in this sample.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.