Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperatures

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 61-64

  Zhao, P ^a   Rusli, ^a   Liu, Y ^a   Tin, C C ^b   Zhu, W G ^a   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b AUBURN UNIVERSITY   (United States)

Author keywords

Conductance; Interface; MOS; SiC

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; NITROGEN OXIDES; SILICON CARBIDE;

CONDUCTANCE; DYNAMIC DECOMPOSITION; INTERFACE;

MOS CAPACITORS;

EID: 30344447529     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.026     Document Type: Conference Paper

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