Band alignment of SiO2/Si structure formed with nitric acid vapor below 500 °C

Surface Science

Volumn 603, Issue 7, 2009, Pages 968-972

  Imamura, Kentarou ^a,b   Takahashi, Masao ^a,c   Imai, Shigeki ^b,c   Kobayashi, Hikaru ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Insulating films; Metal oxide semiconductor; Nitric acid; Oxidation; Semiconductor insulator interfaces; Silicon; Silicon oxides; X ray photoelectron spectroscopy

Indexed keywords

ACIDS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; HETEROJUNCTIONS; INSULATING MATERIALS; INSULATION; NITRIC ACID; OXIDATION; OXIDE FILMS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PLASTIC FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SPECTRUM ANALYSIS; VAPORS;

ATOMIC DENSITIES; BAND ALIGNMENTS; BAND-GAP ENERGIES; CONDUCTION BAND OFFSETS; FOWLER-NORDHEIM; FOWLER-NORDHEIM PLOTS; INSULATING FILMS; LEAKAGE CURRENT DENSITIES; LOW-TEMPERATURE FORMATIONS; METAL-OXIDE-SEMICONDUCTOR; SEMICONDUCTOR-INSULATOR INTERFACES; VALENCE BAND OFFSETS; VAPOR OXIDATIONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 62749100037     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.01.026     Document Type: Article

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