Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method

Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages

  Kim, Woo Byoung ^a   Asuha , ^a,b   Matsumoto, Taketoshi ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Normal University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL OXYGEN DEMAND; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; HYDROGEN; LEAKAGE CURRENTS; NITRIC ACID; NONMETALS; OXIDATION; OZONE WATER TREATMENT; SILICON; SOLUTIONS;

AQUEOUS SOLUTIONS; CURRENT FLOWING; ELECTRICAL CHARACTERISTICS; NITRIC ACID OXIDATION METHOD; POST-METALLIZATION ANNEALING; SI SUBSTRATES; SI(111); SI-SIO2 INTERFACES; VALENCE-BAND DISCONTINUITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50249084391     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2970040     Document Type: Article

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