Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition

Thin Solid Films

Volumn 293, Issue 1-2, 1997, Pages 52-62

  Landheer, D ^a   Hulse, J E ^a   Quance, T ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Chemical vapour deposition; Ellipsometry; Plasma processing and deposition; Silicon oxide

Indexed keywords

ABSORPTION SPECTROSCOPY; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FILM GROWTH; FLUORESCENCE; INTERFACES (MATERIALS); OXIDATION; SILANES; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC ABSORPTION SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); PLASMA OXIDATION;

SILICA;

EID: 0030715448     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08902-X     Document Type: Article

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