Silicon oxidation by ozone

Journal of Physics Condensed Matter

Volumn 21, Issue 18, 2009, Pages

  Fink, Christian K ^a   Nakamura, Ken ^b   Ichimura, Shingo ^b   Jenkins, Stephen J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE-FREE; DIOXYGEN; ELECTRICAL CHARACTERISTICS; GROWTH CHARACTERISTICS; LOW TEMPERATURES; OXIDATION PROCESS; SILICON OXIDATIONS;

OXIDATION; OXIDATION RESISTANCE; OZONE;

SILICON OXIDES;

EID: 65449134746     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/18/183001     Document Type: Article

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