SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 361-364

Hydrofluoric acid etching of ultra thin silicon oxide film fabricated by high purity ozone

(3) Nakamura, Ken a Kurokawa, Akira a Ichimura, Shingo a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

Etching; Oxidation; Ozone; Silicon; Silicon oxide; XPS

Indexed keywords

CRYSTAL ORIENTATION; ETCHING; FILM GROWTH; HYDROFLUORIC ACID; OXIDATION; OZONE; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; THERMAL EFFECTS; ULTRATHIN FILMS;

HIGH PURITY OZONE JET GENERATOR SYSTEMS;

SEMICONDUCTING FILMS;

EID: 0032649955 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01658-7 Document Type: Article

Times cited : (16)

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