Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 281-286

  Kurokawa, Akira ^a   Narushima, Tetsuya ^a   Nakamura, Ken ^a   Nonaka, Hidehiko ^a   Ichimura, Shingo ^a   Itakura, Akiko N ^b   Kitajima, Masahiro ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Compressive stress; Hydrogen termination; Low temperature oxidation; Oxidation; Ozone; Silicon; Stress; Structural transition layer

Indexed keywords

CHEMICAL BONDS; COMPRESSIVE STRESS; LOW TEMPERATURE EFFECTS; OXIDATION; OZONE; STRESSES; SUBSTRATES; SURFACE PHENOMENA;

HYDROGEN TERMINATION; LOW TEMPERATURE OXIDATION; STRUCTURAL TRANSITION LAYER;

SEMICONDUCTING SILICON;

EID: 1842855246     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.281     Document Type: Article

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