Etching-enhanced surface stress relaxation during initial ozone oxidation

Surface Science

Volumn 601, Issue 5, 2007, Pages 1384-1388

  Narushima, Tetsuya ^a   Kitajima, Masahiro ^a   Itakura, Akiko N ^a   Kurokawa, Akira ^b   Ichimura, Shingo ^b   Miki, Kazushi ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ozone oxidation; Scanning tunneling microscopy; Silicon; Surface stress measurement

Indexed keywords

CRYSTALLINE MATERIALS; ETCHING; OXIDATION; OZONE; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE CHEMISTRY;

OZONE OXIDATION; SURFACE STRESS MEASUREMENT; SURFACE STRESS RELAXATION;

STRESS RELAXATION;

EID: 33847170615     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.01.006     Document Type: Article

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