Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Wang, L ^a   Chu, Paul K ^a   Anders, Andre ^b   Cheung, Nathan W ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR POLLUTION; CERAMIC CAPACITORS; CHARGE DENSITY; CHEMICAL OXYGEN DEMAND; CONCENTRATION (PROCESS); DIELECTRIC PROPERTIES; GASES; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NONMETALS; OXIDATION; OXYGEN; OZONE; OZONE LAYER; PHOTODEGRADATION; PHOTOELECTRON SPECTROSCOPY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING CHARACTERISTICS; CHEMICAL-; CORE-LEVEL SPECTRA; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FILM MORPHOLOGY; FIXED CHARGE DENSITY; H IGH CONCENTRATIONS; HF O2 FILMS; HIGH RESOLUTIONS; HIGH TEMPERATURE; HIGH-TEMPERATURE OXIDATION; INTERFACIAL LAYER; LOW TEMPERATURE; MEDIUM-TEMPERATURE; OXIDATION TEMPERATURES; OZONE OXIDATION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 51849153247     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976340     Document Type: Article

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