Enhanced oxidation of silicon using a collimated hyperthermal ozone beam

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 382-384

  Nishiguchi, T ^a   Morikawa, Y ^a   Miyamoto, M ^a   Nonaka, H ^b   Ichimura, S ^b  

^a MEIDENSHA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ETCHING; EXCIMER LASERS; INTEGRATED CIRCUIT MANUFACTURE; OXIDATION; OZONE; PULSED LASER APPLICATIONS; SILICA; SYNTHESIS (CHEMICAL); ULTRATHIN FILMS;

THERMAL ENERGY; TRANSLATIONAL ENERGY;

SEMICONDUCTING SILICON;

EID: 0035898527     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380242     Document Type: Article

References (17)