Effects of surface disorder on the surface stress of Si(100) during oxidation

Applied Surface Science

Volumn 159, Issue , 2000, Pages 25-29

  Narushima, Tetsuya ^a,b   Itakura, Akiko N ^a   Kurashina, Takayuki ^a,b   Kawabe, Takaya ^b   Kitajima, Masahiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ION BOMBARDMENT; SEMICONDUCTOR PLASMAS; STRESS RELAXATION; THERMOOXIDATION; ULTRATHIN FILMS;

OPTICAL MICROCANTILEVERS; PLASMA OXIDATION; SURFACE DISORDERS;

SEMICONDUCTING SILICON;

EID: 0034204703     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00065-9     Document Type: Article

References (14)

1. Muller D.A., Sorsch T., Moccio S., Baumann F.H., Evans-Lutterodt K., Timp G. Nature. 399:1999;758.
2. Timp G.et al. IEDM Technical Digest 615-618. 1998;IEDM, San Francisco.
3. Ogawa S., Shiono N. Phys. Rev. B. 51:1995;4218.
4. Gusev E.P., Lu H.C., Gustafsson T., Garfunkel E. Phys. Rev. B. 52:1995;1759.
5. Kobeda E., Irene E.A. J. Vac. Sci. Technol. B. 6:1988;574.
6. Koch R., Winau D., Rieder K.H. Physica Scripta. 49:1993;539.
7. Ibach H. Surf. Sci. Rep. 29(5-6):1997;193-263.
8. A.N. Itakura, T. Narushima, M. Kitajima, K. Teraishi, A. Yamada, A. Miyamoto, in this proceedings.
9. Ziegler J.F.et al. The Stopping and Ranges of Ions in Solids. 1984;Pergamon, New York.
10. Kitajima M., Kamioka I., Nakamura K.G., Hishita S. Phys. Rev. B. 53:1996;3993.
11. Stoney G.G. Proc. R. Soc. London, Ser. A. 82:1909;172.
12. Kitajima M. Crit. Rev. Solid State Mater. Sci. 22:1997;275.
13. Kamioka I., Kitajima M., Kawabe T., Nakamura K.G., Hishita S. J. Surf. Sci. Soc. Jpn. 16:1995;32.
14. Itakura A.N., Narushima T., Kitajima M. Trance. MRS-J. 24:1999;75.