Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 60-62

  Chen, Yung Yu ^a   Fu, Wen Yu ^b   Yeh, Ching Fa ^c  

^a LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

HfAlON; High dielectric; Ozone oxide

Indexed keywords

DIELECTRIC PROPERTIES; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDES; OZONE; TRANSCONDUCTANCE;

INTERFACIAL OXIDE; OZONE OXIDE; SATURATION DRAIN CURRENT; SUBTHRESHOLD SWING;

GATE DIELECTRICS;

EID: 37549033460     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911977     Document Type: Article

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