Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7602-7604

  Nakamura, Ken ^a   Ichimura, Shingo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Infrared absorption spectroscopy; Ozone; Silicon; Silicon oxide; X ray photoelectron spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; FABRICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); OZONE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BOND ANGLE; OZONE-OXIDE FILMS; STRUCTURAL TRANSITION LAYERS;

SILICA;

EID: 31544463562     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7602     Document Type: Article

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