High-density layer at the SiO2/Si interface observed by difference X-ray reflectivity

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 B, 1996, Pages

  Awaji, Naoki ^a   Ohkubo, Satoshi ^a   Nakanishi, Toshiro ^a   Sugita, Yoshihiro ^a   Takasaki, Kanetake ^a   Komiya, Satoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); FILM GROWTH; GATES (TRANSISTOR); OXIDATION; SEMICONDUCTING SILICON; SILICA; SYNCHROTRON RADIATION; THERMAL EFFECTS; ULTRATHIN FILMS; X RAY ANALYSIS;

DIFFERENCE X RAY REFLECTIVITY; GATE OXIDES; INTERFACIAL LAYER;

INTERFACES (MATERIALS);

EID: 0029733531     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l67     Document Type: Article

References (14)