Reaction analysis of initial oxidation of silicon by UV-light-excited ozone and the application to rapid and uniform SiO2 film growth

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Tosaka, Aki ^a,c   Nonaka, Hidehiko ^a   Ichimura, Shingo ^a   Nishiguchi, Tetsuya ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIDENSHA CORPORATION   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; FILM GROWTH; OXIDATION; SILICA; ULTRAVIOLET RADIATION;

DENSITY CHANGE; EXCIMER LASER LIGHT; PHOTON DENSITY; WAFER WIDTH;

SILICON;

EID: 33847111101     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433750     Document Type: Article

References (18)

1. Y. Nakata, T. Okamoto, T. Hamada, T. Itoga, and Y. Ishii, Extended Abstracts of IWGI2001, November 1-2 (International Workshop on Gate Insulator, Tokyo, 2001), p. 120.
2. Y. Ebiko and Y. Mashima, Extended Abstracts of IDW02, December 4-6 (The Ninth International Display Workshop, Hiroshima, 2002), p. 271.
3. U. Hofer, P. Morgen, W. Wurth, and E. Umbach, Phys. Rev. Lett. 55, 2979 (1985).
4. P. Gupta, C. H. Mak, P. A. Coon, and S. M. George, Phys. Rev. B 40, 7739 (1989).
5. I. W. Boyd, V. Craciun, and A. Kazor, Jpn. J. Appl. Phys., Part 1 32, 6141 (1993).
6. J. Y. Zhang and I. W. Boyd, Appl. Surf. Sci. 186, 64 (2002).
7. A. Fukano and H. Oyanagi, J. Appl. Phys. 94, 3345 (2003).
8. Q. Fang, J. Y. Zhang, and I. W. Boyd, Appl. Surf. Sci. 208-209, 369 (2003).
9. D. L. Baulch, R. A. Cox, P. J. Crutzen, J. R. F. Hampson, J. A. Kerr, J. Troe, and R. T. Watson, J. Phys. Chem. Ref. Data 11, 327 (1982).
10. T. Nishiguchi, H. Nonaka, S. Ichimura, Y. Morikawa, M. Kekura, and M. Miyamoto, Appl. Phys. Lett. 81, 2190 (2002).
11. A. Tosaka, T. Nishiguchi, H. Nonaka, and S. Ichimura, Jpn. J. Appl. Phys., Part 2 44, L1144 (2005).
12. E. D. Palik, Handbook of Optical Constants of Solids (Academic, New York, 1985).
13. S. Ichimura, H. Nonaka, Y. Morikawa, T. Noyori, T. Nishiguchi, and M. Kekura, J. Vac. Sci. Technol. A 22, 1410 (2004).
14. T. Ueno, A. Morioka, S. Chikamura, and Y. Iwasaki, Jpn. J. Appl. Phys., Part 2 39, L327 (2000).
15. R. W. Keyes, IBM J. Res. Dev. 7, 334 (1963).
16. R. J. Harrach, T. D. M. Vicar, G. I. Kachen, and L. L. Steinmetz, Opt. Commun. 5, 175 (1972).
17. S. T. Amimoto, A. P. Force, and J. R. Wisemfeld, Chem. Phys. Lett. 60, 327 (1978).
18. R. Gilpin, H. I. Schiff, and K. H. Welge, J. Chem. Phys. 55, 1087 (1971).