Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 2835-2839

  Nishiguchi, Tetsuya ^a,b   Saitoh, Shigeru ^a   Kameda, Naoto ^a,b   Morikawa, Yoshiki ^a   Kekura, Mitsuru ^a   Nonaka, Hidehiko ^b   Ichimura, Shingo ^b  

^a MEIDENSHA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; OZONE; PHOTONS; SILICA; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

INSULATING PROPERTIES; MOBILE IONS; TRAP CHARGES;

SILICON;

EID: 34547902871     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2835     Document Type: Article

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