Effect of Si lattice strain on the reliability characteristics of ultrathin SiO2 on a 4° tilted wafer

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 386-388

  Chang, Hyo Sik ^a   Choi, Sangmu ^a   Yang, Hyundoek ^a   Min, Kyung Youl ^a   Moon, Dae Won ^a   Lee, Hyung Ik ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL WAFERS; GATE DIELECTRIC APPLICATIONS; GATE OXIDE; LATTICE STRAIN; MEDIUM ENERGY ION SCATTERING SPECTROSCOPIES; METAL OXIDE SEMICONDUCTOR; RELIABILITY CHARACTERISTICS; STRUCTURAL CHARACTERISTICS; ULTRA-THIN; ULTRATHIN GATE DIELECTRICS;

GATE DIELECTRICS; MOS DEVICES; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON WAFERS;

EID: 79956043894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435404     Document Type: Article

References (9)

1. K. Eriguchi, Y. Harada, and M. Niwa, J. Appl. Phys. 87, 1990 (2000). jap JAPIAU 0021-8979
2. Y. P. Kim, S. K. Choi, H. K. Kim, and D. W. Moon, Appl. Phys. Lett. 71, 3504 (1997). apl APPLAB 0003-6951
3. Y. H. Ha, S. H. Kim, S. Y. Lee, J. H. Kim, D. H. Baek, H. H. Kim, and D. W. Moon, Appl. Phys. Lett. 74, 3510 (1999). apl APPLAB 0003-6951
4. T. Yang and K. C. Saraswat, IEEE Trans. Electron Devices 47, 746 (2000). etd IETDAI 0018-9383
5. J. F. van der Veen, Surf. Sci. Rep. 5, 199 (1985). ssr SSREDI 0167-5729
6. J. C. Lee, C. S. Chung, H. J. Kang, Y. P. Kim, H. K. Kim, and D. W. Moon, J. Vac. Sci. Technol. A 13, 1325 (1995). jva JVTAD6 0734-2101
7. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, Phys. Rev. B 52, 1759 (1995). prb PRBMDO 0163-1829
8. J. M. Zhou, N. Lin, L. W. Guo, M. H. Zhang, Q. Huang, N. Cue, and T. Chen, Appl. Phys. Lett. 69, 3336 (1996). apl APPLAB 0003-6951
9. A. Kurokawa, K. Nakamura, S. Ichimura, and D. W. Moon, Appl. Phys. Lett. 76, 493 (2000). apl APPLAB 0003-6951