Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperature

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 589-592

  Maeda, T ^a   Kurokawa, A ^a   Sakamoto, K ^a   Ando, A ^a   Itoh, H ^a   Ichimura, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; ETCHING; FILM GROWTH; FLUORINE COMPOUNDS; INTERFACES (MATERIALS); OXIDATION; OZONE; SCANNING TUNNELING MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROFLUORIDE ETCHING; LATERAL OXIDE GROWTH; OXIDANT; OZONE GAS; SILICON HOMOEPITAXY; ULTRATHIN SILICON DIOXIDE;

SILICA;

EID: 0035272034     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1356064     Document Type: Article

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