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Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

Control of interfacial silicate between HfO 2 and Si by high concentration ozone

(5) Wang, L a Xue, K a Xu, J B a Huang, A P b Chu, Paul K b

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH CONCENTRATION OZONE; INTERFACIAL LAYERS; SEMICONDUCTOR CAPACITORS; SILICON SUBSTRATES;

HAFNIUM COMPOUNDS; HYSTERESIS; LOW TEMPERATURE EFFECTS; MICROSTRUCTURE; OZONIZATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICATES;

EID: 32944479495 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2173708 Document Type: Article

Times cited : (33)

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