High-quality SiO2 film formation by highly concentrated ozone gas at below 600°C

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2190-2192

  Nishiguchi, Tetsuya ^a   Nonaka, Hidehiko ^a   Ichimura, Shingo ^a   Morikawa, Yoshiki ^b   Kekura, Mitsuru ^b   Miyamoto, Masaharu ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIDENSHA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; FILM FORMATIONS; HIGH QUALITY; INTERFACE TRAP DENSITY; LOW TEMPERATURES; OXIDATION RATES; OZONE GAS; PARABOLIC RATE CONSTANTS; TEMPERATURE DEPENDENCE; TEMPERATURE OXIDATION;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); OXIDATION; OZONE; RATE CONSTANTS; SILICON COMPOUNDS;

SILICON OXIDES;

EID: 79955984189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507829     Document Type: Article

References (21)

1. M. M. Moslehi, R. A. Chapman, M. Wong, A. Paranjpe, H. N. Najm, J. Kuehne, R. L. Yeakley, and C. J. Davis, IEEE Trans. Electron Devices ED-39, 4 (1992). etd IETDAI 0018-9383
2. T. Fuyuki, S. Muranaka, and H. Matsunami, Appl. Surf. Sci. 117/118, 123 (1997). asu ASUSEE 0169-4332
3. T. Ueno, A. Morioka, S. Chikamura, and Y. Iwasaki, Jpn. J. Appl. Phys., Part 2 39, L327 (2000). jjc JAPLD8 0021-4922
4. A. Kazor and I. W. Boyd, Electron. Lett. 27, 909 (1991). ell ELLEAK 0013-5194
5. Y. Ishikawa, T. Shibamoto, and I. Nakamichi, Jpn. J. Appl. Phys., Part 1 31, 1148 (1992). jjb JAPNDE 0021-4922
6. J.-Y. Zhang and I. W. Boyd, Appl. Phys. Lett. 71, 2964 (1997). apl APPLAB 0003-6951
7. T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto, H. Nonaka, and S. Ichimura, Rev. Sci. Instrum. 73, 1217 (2002). rsi RSINAK 0034-6748
8. K. Nakamura, A. Kurokawa, and S. Ichimura, J. Vac. Sci. Technol. A 15, 2441 (1997). jva JVTAD6 0734-2101
9. A. Kurokawa, K. Nakamura, S. Ichimura, and D. W. Moon, Appl. Phys. Lett. 76, 493 (2000). apl APPLAB 0003-6951
10. K. Nakamura, S. Ichimura, A. Kurokawa, K. Koike, G. Inoue, and T. Fukuda, J. Vac. Sci. Technol. A 17, 1275 (1999). jva JVTAD6 0734-2101
11. F. J. Himpsel, F. R. McFreely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollonger, Phys. Rev. B 38, 6084 (1988). prb PRBMDO 0163-1829
12. A. Kazor and I. W. Boyd, Appl. Phys. Lett. 63, 2517 (1993). apl APPLAB 0003-6951
13. Z. Cui, J. M. Madsen, and C. G. Takoudis, J. Appl. Phys. 87, 8181 (2000). jap JAPIAU 0021-8979
14. K. K. Ng, W. J. Polito, and J. R. Ligenza, Appl. Phys. Lett. 44, 626 (1984). apl APPLAB 0003-6951
15. A. Kurokawa, K. Nakamura, and S. Ichimura, in Proceedings of the 2000 Characterization and Metrology for ULSI Technology, edited by D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith, and E. M. Secula, (AIP, New York, 2001), p. 191.
16. E. H. Nicollian and J. R. Brew, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982), p. 332.
17. G. Eftekhari, J. Electrochem. Soc. 140, 787 (1993). jes JESOAN 0013-4651
18. A. Kurokawa and S. Ichimura, Jpn. J. Appl. Phys., Part 2 34, L1606 (1995). jjc JAPLD8 0021-4922
19. E. A. Irene, J. Electrochem. Soc. 125, 1708 (1978). jes JESOAN 0013-4651
20. R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, and R. A. Weller, Appl. Phys. Lett. 77, 2560 (2000). apl APPLAB 0003-6951
21. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969). jap JAPIAU 0021-8979