Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone

Applied Physics Letters

Volumn 76, Issue 4, 2000, Pages 493-495

  Kurokawa, Akira ^a   Nakamura, Ken ^a   Ichimura, Shingo ^a   Moon, Dae Won ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001445329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125798     Document Type: Article

References (10)

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