High quality gate dielectric film on poly-silicon grown at room temperature using UV light excited ozone

Journal of the Electrochemical Society

Volumn 154, Issue 9, 2007, Pages

  Kameda, N ^a,b   Nishiguchi, T ^a,b   Morikawa, Y ^a   Kekura, M ^a   Nonaka, H ^b   Ichimura, S ^b  

^a MEIDENSHA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GATE DIELECTRICS; METAL INSULATOR BOUNDARIES; POLYCRYSTALLINE MATERIALS; POLYSILICON; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

CURRENT BEHAVIOR; FOWLER-NORDHEIM TUNNEL CURRENTS; GATE DIELECTRIC FILMS; ROOM TEMPERATURE;

DIELECTRIC FILMS;

EID: 34547528526     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2750517     Document Type: Article

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