Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1898-1901

  Chen, Shih Chang ^a   Chen, Yung Yu ^b   Chang, Yu Tzu ^a   Lou, Jen Chung ^a   Kin, Kon Tsu ^c   Chien, Chao Hsin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b YUANPEI UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Charge trapping; High ; Ozone; Reliability; Surface treatment

Indexed keywords

CHARGE TRAPPING; CURRENT DENSITY; HYSTERESIS; LEAKAGE CURRENTS; OZONE; SURFACE TREATMENT;

HIGH-Κ GATE STACKS; HIGH-QUALITY INTERFACES; SILICON SURFACES;

GATE DIELECTRICS;

EID: 34249086335     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.127     Document Type: Article

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