Oxidation of silicon and silicon carbide in ozone-containing atmospheres at 973 K

Journal of the American Ceramic Society

Volumn 85, Issue 8, 2002, Pages 2049-2055

  Narushima, Takayuki ^a,b   Kato, Michihisa ^a,c   Murase, Shin ^a   Ouchi, Chiaki ^a   Iguchi, Yasutaka ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b AMERICAN CERAMIC SOCIETY   (United States)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELLIPSOMETRY; MIXTURES; OZONE; SILICON WAFERS; SINGLE CRYSTALS; THERMOOXIDATION;

PARABOLIC OXIDATION KINETICS;

SILICON CARBIDE;

EID: 0036686291     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2002.tb00402.x     Document Type: Article

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