|
|
Volumn 482-485, Issue PART 1, 2001, Pages 114-120
|
|
Initial oxidation process by ozone on Si(1 0 0) investigated by scanning tunneling microscopy
a
|
|
Author keywords
Adsorption kinetics; Models of surface kinetics; Scanning tunneling microscopy; Semiconductor insulator interfaces; Silicon; Silicon oxides
|
|
Indexed keywords
ADSORPTION;
HYDROFLUORIC ACID;
OXIDATION;
OZONE;
REACTION KINETICS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
SEMICONDUCTOR MATERIALS;
SILICA;
SURFACE KINETICS;
SURFACE CHEMISTRY;
|
|
EID: 18144450663
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(00)01004-9 Document Type: Conference Paper |
|
Times cited : (15)
|
|
References (17)
|
