Improved reliability characteristics of ultrathin SiO2 grown by low temperature ozone oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 5971-5973

  Chang, Hyo Sik ^a   Choi, Sangmoo ^a   Moon, Dae Won ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Gate oxide; Interface; Medium energy ion scattering; MOS; Ozone oxide; Reliability

Indexed keywords

COMPOSITION; CRYSTAL LATTICES; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MECHANICAL TESTING; MOS CAPACITORS; OXIDATION; OZONE; RELAXATION PROCESSES; RELIABILITY; SEMICONDUCTOR GROWTH; ULTRATHIN FILMS;

ELECTRICAL STRESS TESTS; ENERGY LOSS ANALYSIS; GATE DIELECTRIC; LOW TEMPERATURE OZONE OXIDATION; MEDIUM ENERGY ION SCATTERING SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036819287     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5971     Document Type: Article

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