Improved electrical properties of ALD HfxZr1-x O2 dielectrics deposited on ultrathin PVD Zr underlayer

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 57-59

  Triyoso, Dina H ^a   Hegde, Rama I ^a   Jiang, Jack ^a   Schaeffer, James K ^a   Raymond, Mark V ^a,b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Atomic layer deposition (ALD); Charge trapping; High dielectrics; Mobility; Tetragonal phase

Indexed keywords

CHARGE TRAPPING; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUBSTRATES; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; ZIRCON;

METAL UNDERLAYER; SILICON SUBSTRATE; TETRAGONAL PHASE;

ATOMIC LAYER DEPOSITION;

EID: 37549069675     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911979     Document Type: Article

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