Design and demonstration of very high-k (k∼50) HfO2 for ultra-scaled Si CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 152-153

  Migita, S ^a   Watanabe, Y ^a   Ota, H ^a   Ito, H ^a   Kamimuta, Y ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TECHNOLOGY;

VLSI TECHNOLOGIES;

HAFNIUM COMPOUNDS;

EID: 51949115747     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588599     Document Type: Conference Paper

References (6)

1. K. Mistry et al., IEDM Tech. Dig. (2007), p.247.
2. P.W. Peacock and J. Robertson, J. Appl. Phys., 92 (2002) 4712.
3. K. Kita et al., Appl. Phys. Lett., 86 (2005) 102906.
4. A. Toriumi and K. Kita, "Material Engineering of High-k Gate Dielectrics," John Wiley & Sons, (2007), p.297.
5. Y. Watanabe et al., ECS Trans. Vol. 11(4), 2007, p. 35.
6. H. Ota et al., IEDM Tech Dig. (2007), p. 65.