Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

Journal of Applied Physics

Volumn 102, Issue 11, 2007, Pages

  Maitra, Kingsuk ^a,c   Frank, Martin M ^b   Narayanan, Vijay ^b   Misra, Veena ^a   Cartier, Eduard A ^b  

^a North Carolina State University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c AMD Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; HAFNIUM COMPOUNDS; MEASUREMENT THEORY; PHONON SCATTERING; TITANIUM NITRIDE;

METAL GATES; METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (NMOSFET);

GATE DIELECTRICS;

EID: 37148999689     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821712     Document Type: Article

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