Total ionizing dose effects in bipolar devices and circuits

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 539-551

  Pease, R L ^a  

^a RLP Research   (United States)

Author keywords

Bipolar circuits; Bipolar devices; Enhanced low dose rate sensitivity; Gamma radiation; Hardness assurance; Ionizing radiation; Linear circuits; Post irradiation annealing; Pre irradiation elevated; Proton and electron radiation; Temperature stress, total dose

Indexed keywords

BIPOLAR TRANSISTORS; DIGITAL CIRCUITS; GAMMA RAYS; LINEAR NETWORK ANALYSIS; RADIATION HARDENING; THERMAL EFFECTS; THERMAL STRESS;

ELECTRON RADIATION; ENHANCED LOW DOSE RATE SENSITIVITY; POST IRRADIATION ANNEALING; PROTON RADIATION; TOTAL IONIZING DOSE EFFECTS;

RADIATION EFFECTS;

EID: 0038454483     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.813133     Document Type: Article

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