Radiation-induced gain degradation in lateral pnp b jts with lightly and heavily doped emitters

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1914-1921

  Wu, A ^a,b   Schrimpf, R D ^c   Barnaby, H J ^d,e   Fleetwood, D M ^e   Pease, R L ^a,e   Rosier, S L ^c,d,e  

^a UNIVERSITY OF ARIZONA   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d RLP Research Inc   (United States)

^e VTC Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; INTERFACES (MATERIALS); IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BIPOLAR JUNCTION TRANSISTORS (BJT); INTERFACE TRAP FORMATION;

BIPOLAR TRANSISTORS;

EID: 0031342648     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658962     Document Type: Article

References (16)

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