The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1840-1848

  Pershenkov, V S ^a   Maslov, V B ^b   Cherepko, S V ^b   Shvetzov Shilovsky, I N ^b   Belyakov, V V ^b   Sogoyan, A V ^b   Rusanovsky, V I ^a   Ulimov, V N ^a   Emelianov, V V ^b   Nasibullin, V S ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; IRRADIATION; MATHEMATICAL MODELS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS;

CHARGE NEUTRALIZATION; EMITTER JUNCTIONS;

BIPOLAR TRANSISTORS;

EID: 0031375377     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658951     Document Type: Article

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