Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2571-2576

  Pease, Ronald L ^a   McClure, Steve ^b   Gorelick, Jerry ^c   Witczak, Steven C ^a  

^a RLP Research   (United States)

^b BOEING COMPANY   (United States)

^c AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOSIMETRY; HYDROGEN; INTERFACES (MATERIALS); IONIZING RADIATION; PASSIVATION; RADIATION DAMAGE;

BORDER TRAPS;

VOLTAGE REGULATORS;

EID: 0032314294     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736499     Document Type: Article

References (23)

1. E.W. Enlow, étal., "Response of advanced bipolar processes to ionizing radiation," IEEE Trans. Nucl. Sei., NS-38,p. 1342,1991.
2. D.M. Fleetwood, et al.. "Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates," IEEE Trans. Nucl. Sei., NS-41, p. 1871, 1994.
3. D.M. Fleetwood, et al, "Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides," IEEE Trans. Nucl. Sei., NS-43, p. 2537, 1996.
4. S.C. Witczak, etal, "Space charge limited degradation of bipolar oxides at low electric-fields" presented at the 1998 IEEE NSREC in Newport Beach, CA, July 1998.
5. S.C. Witczak, et al., "Measurement bias dependence of enhanced bipolar gain degradation at Low dose rate," presented at the 1998 IEEE NSREC in Newport Beach, CA, July 1998.
6. R.D. Schrimpf, etal., "Hardness-assurance issues for lateral PNP bipolar junction transistors," IEEE Trans. Nucl. Sc-J.,NS-42, p. 1641, 1995.
7. S.C. Witczak, etal., "Accelerated tests for simulating low dose rate gain degradation of Lateral and Substrate PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sei, NS-43, p. 3151, 1996.
8. S.C. Witczak, et al., "Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures," IEEE Trans. Nucl. Sei., NS-44, p. 1989, 1997.
9. J.T. Beaucour, et al., "Total dose effects on negative voltage regulator," IEEE Trans. Nucl. Sei., NS-41, p. 2420, 1994.
10. S. McClure, étal., "Dependence of total dose response of bipolar linear microcircuits on applied dose rate," IEEE Trans. Nucl. Sei., NS-41, p. 2544, 1994.
11. A.M. Johnston, G.M.Swift and B.C. Rax, "Total dose effects in conventional bipolar transistors and integrated circuits," IEEE Trans. Nucl. Sei., NS-41, p. 2427, 1994.
12. R.L. Pease, etal., "A compendium of recent total dose data on bipolar linear microcircuits," 1996 IEEE Radiation Effects Data Workshop Record, p. 28, 1996.
13. R.L. Pease and M. Gehlhausen, "Elevated temperature irradiation of bipolar linear microcircuits," IEEE Trans. Nucl. Sei., NS-43, p. 3161, 1996.
14. A.H. Johnston, C.I. Lee, and B.G. Rax, "Enhanced damage in bipolar devices at low dose rates: Effects at very low dose rates," IEEE Trans. Nucl. Sei., NS-43, p. 3049, 1996.
15. H. Barnaby, étal, "Analysis of bipolar linear circuit response mechanisms for high and low dose rate total dose response," IEEE Trans. Nucl. Sei., NS-43, p. 3040, 1996.
16. R.L. Pease, etal., "A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment," IEEE Trans. Nucl. Sei., NS-44, p. 1981, 1997.
17. M. Simons, etal., "Common-source TLD and RADFET characteristics of Co-60, Csl37, and x-ray irradiation sources," 1997 IEEE Radiation Effects Data Workshop Record, p. 28, 1997.
18. T. Horiuchi, J.D. Burnett and C. Hu, "Bipolar transistor degradation under dynamic hot carrier stress," IEEE Trans. Electron Devices, ED-37, 1990.
19. C.J. Huang, C.J. Sun, T.A. Grotjohn and O.K. Reinhard, "Temperature dependence and post-stress recovery of hot electron degradation effects in bipolar transistors," Proceedings IEEE 1991 Bipolar Circuits and Technology Meeting, pp. 171-173.
20. D.M. Schmidt, et al., "Comparison of ionizing-radiationinduccd gain degradation in lateral, substrate and vertical PNP BJTs," IEEE Trans. Nucl. Sei., NS-42, p. 1541, 1995.
21. D.M.Schmidt, etal., "Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor," IEEE Trans. Nucl. Sei., NS-43, p. 3032, 1996.
22. D.M. Fleetwood, et al., "Effects of interface traps and border traps on MOS postirradiation annealing response," IEEE Trans. Nucl. Sei., NS-42, p. 1698, 1995.
23. D.M. Fleetwood, et al., "1//'noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices," IEEE Trans. Nucl. Sei., NS-44, p. 1810, 1997.