Physical model for enhanced interface-trap formation at low dose rates

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2650-2655

  Rashkeev, Sergey N ^a   Cirba, Claude R ^b   Fleetwood, Daniel M ^b   Schrimpf, Ronald D ^b   Witczak, Steven C ^c   Michez, Alain ^d   Pantelides, Sokrates T ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Cente Electron Microelectron M   (France)

Author keywords

Bipolar transistors; Interface phenomena; Radiation effects; Space technology

Indexed keywords

ELECTRIC SPACE CHARGE; HOLE TRAPS; INTERFACES (MATERIALS); NUMERICAL METHODS; OXIDES; PROTONS; RADIATION EFFECTS;

INTERFACE TRAPS;

BIPOLAR TRANSISTORS;

EID: 0036947655     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805387     Document Type: Conference Paper

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