Enhanced Total Dose Damage in Junction Field Effect Transistors and Related Linear Integrated Circuits

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3060-3067

  Flament, O ^a   Autran, J L ^b   Roche, P ^c   Leray, J L ^b   Musseau, O ^c   Truche, R ^a   Orsier, E ^c  

^a CEA DIF   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS; IRRADIATION; LINEAR INTEGRATED CIRCUITS; OXIDES; RADIATION DAMAGE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

LOW DOSE RATE IRRADIATION; RADIATION INDUCED HOLES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030362198     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556905     Document Type: Article

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