Evaluation of accelerated total dose testing of linear bipolar circuits

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2350-2357

  Carriere T ^a   Ecoffet, R ^b   Poirot, P ^c  

^a AIRBUS DEFENCE AND SPACE   (Germany)

^b CNES   (France)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; COMPUTER SIMULATION; DEGRADATION; DOSIMETRY; ELECTRIC CURRENTS; INTEGRATED CIRCUIT TESTING; IRRADIATION; LINEAR INTEGRATED CIRCUITS; THERMAL EFFECTS;

ACCELERATED TOTAL DOSE TESTING; BIAS CURRENT; DOSE RATE; LINEAR BIPOLAR CIRCUITS;

RADIATION EFFECTS;

EID: 0034451416     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903776     Document Type: Conference Paper

References (12)

1. Total dose effects on negative voltage regulator
2. Dependence of total dose response of bipolar linear microcircuits on applied dose rate
3. Total dose effects in conventional bipolar transistors and integrated circuits
4. A compendium of recent total dose data on bipolar linear microcircuit
5. First observation of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MTPB experiment
6. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rate
7. Radiation effects at low electric fields in thermal, SIMOX and bipolar-base oxides
8. Enhanced damage in linear bipolar integrated circuits at low dose rate
9. Elevated temperature irradiation of bipolar linear microcircuits
10. Enhanced damage in bipolar devices at low dose rates: Effects at very low dose rates
11. A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment
12. Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)