Analysis of bipolar linear circuit response mechanisms for high and low dose rate total dose irradiations

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3040-3048

  Baraaby, H ^a   Tausch, H J ^a   Turfler, R ^b   Cole, P ^b   Baker, P ^c   Pease, R L ^c  

^a MISSION RESEARCH CORPORATION   (United States)

^b NSWC   (United States)

^c RLP Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK PARAMETERS; IRRADIATION; RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MODELS;

SOFTWARE PACKAGE SPICE;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0030359035     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556903     Document Type: Article

References (12)

1. S. McClure, R. L. Pease, W. Will, and G. Perry, "Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate," IEEE Trans. Nucl. Sei. , NS-41, 2544, 1994.
2. A. H. Johnston, G. M. Swift and E. G. Rax, "Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits," IEEE Trans. Nucl. Sei. , NS-41. 2427,1994.
3. J. Beaucour, T. Carrière, A. Gach, D. Laxague and P. Poirot, "Total Dose Effects on Negative Voltage Regulator," IEEE Trans. Nucl. Sei. , NSl. 2420,1994.
4. A. H. Johnston, E. G. Rax, and C. I. Lee, "Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rates," IEEE Trans. Nucl. Sei. , NS42. 1650,1995.
5. I. Carrière, J. Beaucour, A. Gach, B. Johlander, and L. Adams, "Dose Rate and Annealing Effects on Total Dose Response of MOS and Bipolar Circuits," IEEE Trans. Nucl. Sei. , NS-42. 1567,1995.
6. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber, Jr. , M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates," IEEE Trans. Nucl. Sei. , NS-41. 1871, 1994.
7. V. V. Belyakov, V. S. Pershenkov, A. V. Shalnov, I. N. Shvetzov-Shilovsky, "Use of MOS Structures for the Investigation of Low-Dose-Rate Effects in Bipolar Transistors," IEEE Trans. Nucl. Sei. , NS-42. 1660, 1995.
8. S. L. Kosier, A. Wei, R. D. Schrimpf, D. M. Fleetwood, M. DeLaus, R. L. Pease, and W. E. Combs, "Physically Based comparison of Hot-Carrier-Induced and lonizing-RadiationInduced Degradation in BJTs," IEEE Trans. Elect. Dev. , Vol. 42,436,1995.
9. D. M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, R. J. Graves, G. H. Johnston, K. F. Galloway, and W. E. Combs, "Comparison of lonizing-Radiation-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs," IEEE Trans. Nucl. Sei. , NS-42. 1541, 1995.
10. S. C. Witczak, R. D. Schrimpf, K. F. Galloway, D. M. Fleetwood, R. L. Pease, D. M. Schmidt, W. E. Combs, and J. S. Suehle, "Accelerated Tests for Bounding the Low Dose Rate Radiation Response of Lateral PNP Bipolar Junction Transistors," submitted to the 1996 NSREC.
11. R. A. Pease, "The Design of Band-Gap Reference Circuit: Trials and Tribulations," 1990 IEEE BCMT Meeting.
12. LM117 Data Sheet, National Semiconductor Linear Data Book, 1982.