Enhanced damage in bipolar devices at low dose rates: Effects at very low dose rates

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3049-3059

  Johnston, A H ^a   Lee, C I ^a   Rax, B G ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; HIGH TEMPERATURE EFFECTS; IRRADIATION; JUNCTION GATE FIELD EFFECT TRANSISTORS; RADIATION DAMAGE;

LOW DOSE RATE IRRADIATION;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0030372722     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556904     Document Type: Article

References (13)

1. R. N. Nowlin, E. W. Enlow, R. D. Schrimpf, and W. E. Combs, "Trends in the Total-Dose Response of Modern Bipolar Transistors," IEEE Trans. Nucl. Sei. , NS-39. 1871 (1992).
2. D. M. Fleetwood, S. L. Rosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber, Jr. , M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates," IEEE Trans. Nucl. Sei. . NS-41. 1871 (1994).
3. R. D. Schrimpf, R. J. Graves, D. M. Schmidt, D. M. Fleetwood, R. L. Pease, W. E. Combs, and M. DeLaus, "Hardness-Assurance Issues for Lateral PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sei. , NS-42. 1641 (1995).
4. A. H. Johnston, B. G. Rax, and C. I. Lee, "Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate," IEEE Trans. Nucl. Sei. , NS-42. 1650 (1995).
5. J. Beaucour, T. Carrière, A. Gach, D. Laxague, and P. Poirot, "Total Dose Effects on Negative Voltage Regulator," IEEE Trans. Nucl. Sei. , NS-41. 2420 (1994).
6. S. McClure, R. L. Pease, W. Will, and G. Perry, "Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate," IEEE Trans. Nucl. Sei. , NS-41. 2544 (1994).
7. 2/s): Implication for Hardness Assurance," IEEE Trans. Nucl. Sei. , NS-41. 2637 (1994).
8. P. S. Winokur, H. E. Boesch, Jr. , J. M. McGarrity, and F. B. McLean, "Field-and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors," IEEE Trans. Nucl. Sei. , N-224, 2113(1977).
9. H. E. Boesch, Jr. , and F. B. McLean, "Hole Transport and Trapping in Field Oxides," IEEE Trans. Nucl. Sei. , NS-32. 3940 (1985).
10. A. J. Lelis, T. R. Oldham, and W. M. DeLancey, "Response of Inteface Traps During HighTemperature Anneals," IEEE Trans. Nucl. Sei. , NS3£, 1590 (1991).
11. C. I. Lee, B. G. Rax, and A. H. Johnston, "Hardness Assurance Techniques for COTS Devices," presented at the 1996 Nuclear and Space Radiation Effects Conference, Indian Wells, California, July 18, 1996.
12. D. M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, R. J. Graves, G. H. Johnson, K. FGalloway, and W. E. Combs, "Comparison of Ionizing Radiation Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs," IEEE Trans. Nucl. Sei. , NS-42. 1541 (1995).
13. H. E. Boesch, Jr. , and T. L. Taylor, "Charge and Interface State Generation in Field Oxides," IEEE Trans. Nucl. Sei. , NS-31. 1273 (1984).