Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3171-3179

  Shaneyfelt, Marty R ^a   Pease, Ronald L ^b   Schwank, James R ^a   Maher, Michael C ^c   Hash, Gerald L ^b   Fleetwood, Daniel M ^d   Dodd, Paul E ^a   Reber, Cathleen A ^a   Witczak, Steven C ^a   Riewe, Leonard C ^a   Hjalmarson, Harold P ^a   Banks, James C ^a   Doyle, Barney L ^a   Knapp, James A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b RLP Research   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

Bipolar linear integrated circuits; Enhanced low dose rate sensitivity; Hardness assurance testing; Integrated circuit reliability; Integrated circuit testing; Mechanical stress; Passivation layers; Pre irradiation elevated temperature stress

Indexed keywords

LINEAR NETWORKS; PASSIVATION; RADIATION EFFECTS; RADIATION HARDENING; THERMAL CYCLING; THERMAL STRESS;

PRE-IRRADIATION ELEVATED-TEMPERATURE STRESS (PETS);

BIPOLAR INTEGRATED CIRCUITS;

EID: 0036947714     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805365     Document Type: Conference Paper

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