Radiation effects at low electric fields in thermal, simox, and bipolar-base oxides

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2537-2546

  Fleetwood, D M ^a   Riewe, L C ^b   Schwank Sandia, J R ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b University of Arizona   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; CARRIER CONCENTRATION; DOSIMETRY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; INDUCED CURRENTS; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

BIPOLAR BASE OXIDES; BIPOLAR CAPACITORS; THERMALLY STIMULATED CURRENT (TSC);

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0030361136     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556834     Document Type: Article

References (46)

1. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber, Jr. , M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates," IEEE Trans. Nucl. Sei. 41, 1871 (1994).
2. H. E. Boesch and F. B. McLean, "Hole Transport and Trapping in Field Oxides," IEEE Trans. Nucl. Sei. 22, 3940 (1985).
3. A. H. Johnston, B. G. Rax, and C. I. Lee, "Enhanced Damage in Linear Bipolar ICs at Low Dose Rate," IEEE Trans. Nucl. Sei. 42,1650(1995).
4. V. V. Belyakov, V. S. Pershenkov, A. V. Shalnov, and I. N. Shvetzov-Shilovsky, "Use of MOS Structures for the Investigation of Low-Dose-Rate Effects in Bipolar Transistors," IEEE Trans. Nucl. Sei. 42, 1660 (1995).
5. S. McClure, R. L. Pease, W. Will, and G. Perry, "Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate," IEEE Trans. Nucl. Sei. 41, 2544 (1994).
6. D. M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. Pease, R. Graves, G. Johnson, K. Galloway, and W. Combs, "Comparison of Rad-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJT's," IEEE Trans. Nucl. Sei. 42, 1541 (1995).
7. S. L. Kosier, R. D. Schrimpf, R. N. Nowlin, D. M. Fleetwood, M. DeLaus, R. L. Pease, W. E. Combs, A. Wei, and F. Chai, "Charge Separation for Bipolar Transistors," IEEE Trans. Nucl. Sei. 40,1276 (1993).
8. A. Wei, S. L. Kosier, R. D. Schrimpf, D. M. Fleetwood, and W. E. Combs, "Dose-Rate Effects on Radiation-Induced BJT Gain Degradation," Appl. Phys. Lett. 65, 1918 (1994).
9. S. L. Kosier, A. Wei, R. D. Schrimpf, D. Fleetwood, M. DeLaus, R. Pease, and W. Combs, "Physically Based Comparison of Hot-Carrier-Induced and lonizing-Radiation-Induced Degradation in BJT's," IEEE Trans. Electron Dev. 42, 436 (1995).
10. D. M. Schmidt, A. Wu, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, and W. E. Combs, "Modeling Ionizing Radiation Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor," IEEE Trans. Nucl. Sei. 41 No. 6 (1996).
11. W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, R. Devine, W. Maszara, and J. McKitterick, "Paramagnetic Defect Centers in BESOI and SIMOX Buried Oxides," IEEE Trans. Nucl. Sei. 40, 1755 (1993).
12. J. F. Conley, Jr. , P. M. Lenahan, H. L. Evans, R. K. Lowry, and T. J. Morthorst, "Observation and Electronic Characterization of 'New' E' Center Defects in Technologically Relevant Thermal SiO2 on Si: An Additional Complexity in Oxide Charge Trapping," J. Appl. Phys. 2& 2872 (1994).
13. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur, and R. A. B. Devine, "Microscopic Nature of Border Traps in MOS Oxides," IEEE Trans. Nucl. Sei. 41, 1817(1994).
14. J. M. Conley and P. M. Lenahan, "ESR Analysis of EP Center Interactions with H2: Evidence for a Localized EP Center Structure," IEEE Trans. Nucl. Sei. 42, 1740 (1995).
15. H. E. Boesch, Jr. , T. L. Taylor, L. Kite, and W. Bailey, "TimeDependent Hole and Electron Trapping Effects in SIMOX Buried Oxides," IEEE Trans. Nucl. Sei. 37, 1982 (1990).
16. R. E. Stahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman, and G. A. Brown, "Electron and Hole Trapping in Irradiated SIMOX, ZMR, and BESOI Buried Oxides," IEEE Trans. Nucl. Sei. 32, 2086 (1992); R. E. Stahlbush, "Electron Trapping in Buried Oxides During Irradiation from 40 to 300 K," IEEE Trans. Nucl. Sei. 43, No. 6 (1996).
17. S. Feindt, J. -J. J. Hajjar, J. Lapham, and D. Buss, "XFCB: A High Speed Complementary Bipolar Process on Bonded SOI," IEEE BCTM Tech. Digest, 264 (1992).
18. K. O, P. Garone, C. Tsai, B. Scharf, M. Higgins, D. Mai, C. Kermarrec, and J. Yasaitis, "A Double Polysilicon Self-Aligned npn Bipolar Process (ADRF) with Optional NMOS Transistors for RF and Microwave Applications," IEEE BCTM Tech. Digest, 221 (1994).
19. D. M. Fleetwood, P. S. Winokur, L. J. Lorence, Jr. , W. Beezhold, P. V. Dressendorfer, and J. R. Schwank, "The Response of MOS Devices to Dose-Enhanced Low-Energy Radiation," IEEE Trans. Nucl. Sei. 3_3, 1245 (1986).
20. P. M. Lenahan and P. V. Dressendorfer, "Microstructural Variations in Radiation Hard and Soft Oxides Observed Through ESR," IEEE Trans. Nucl. Sei. 30, 4602 (1983); P. M. Lenahan and P. V. Dressendorfer, "Hole Traps and Trivalent Si Centers in MOS Devices," J. Appl. Phys. 55, 3495 (1984).
21. J. R. Schwank and D. M. Fleetwood, "Effect of Postoxidation Anneal Temperature on Radiation-Induced Charge Trapping in MOS Devices," Appl. Phys. Lett. 5_3, 770 (1988).
22. H. Shin, T. Wetteroth, S. R. Wilson, G. Harris, D. Schröder, W. Krull, and M. Alles, "Effect of N and Ar Anneals on the Leakage Current of SIMOX TFSOI Devices," Proc. 1995 IEEE International SOI Conf. , 44 (1995).
23. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, "Correlating the Radiation Response of MOS Capacitors and Transistors," IEEE Trans. Nucl. Sei. 31. 1453 (1984).
24. R. K. Freitag, C. M. Dozier, and D. B. Brown, "Growth and Annealing of Trapped Holes and Interface States Using TimeDependent Biases," IEEE Trans. Nucl. Sei. 3_4, 1172 (1987).
25. D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr. , T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, "Effects of Oxide Traps, Interface Traps, and 'Border Traps' on MOS Devices," J. Appl. Phys. 73, 5058 (1993).
26. D. M. Fleetwood and L. C. Riewe, unpublished.
27. R. A. Reber, Jr. and D. M. Fleetwood, "TSC Measurements of SiO2 Defect Density and Energy in Irradiated MOS Capacitors," Rev. Sei. Instrum. 63, 5714 (1992).
28. D. M. Fleetwood, S. L. Miller, R. A. Reber, Jr. , P. McWhorter, P. Winokur, M. Shaneyfelt, and J. Schwank, "New Insights Into Radiation-Induced Oxide-Trap Charge Through TSC Measurement and Analysis," IEEE Trans. Nucl. Sei. 39, 2192 (1992).
29. D. M. Fleetwood, R. A. Reber, Jr. , and P. S. Winokur, "Effect of Bias on TSC in Irradiated MOS Devices," IEEE Trans. Nucl. Sei. 38, 1066(1991).
30. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, P. S. Winokur, and S. Montague, "Electron and Hole Trapping in Doped Oxides," IEEE Trans. Nucl. Sei. 42, 1731 (1995).
31. 'S. C. Witczak, R. D. Schrimpf, K. F. Galloway, D. M. Fleetwood, R. L. Pease, J. M. Puhl, D. M. Schmidt, W. E. Combs, and J. S. Suehle, "Accelerated Tests for Simulating the Low Dose Rate Gain Degradation of Lateral and Substrate PNP BJTs," IEEE Trans. Nucl. Sei. 43, No. 6 (1996).
32. R. D. Schrimpf, R. J. Graves, D. M. Schmidt, D. M. Fleetwood, R. L. Pease, W. E. Combs, and M. DeLaus, "Hardness Assurance Issues for Lateral PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sei. 42, 1641 (1995).
33. D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, "Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments," IEEE Trans. Nucl. Sei. 35, 1497 (1988).
34. D. M. Fleetwood, "A First Principles Approach to Total Dose Hardness Assurance," in Advanced Qualification Techniques: A Practical Guide for Radiation Testing of Electronics, ed. J. R. Schwank, IEEE Nuclear and Space Radiation Effects Conf. Short Course, Madison, WI, pp. Ill: 1-69 (1995); D. M. Fleetwood, P. S. Winokur, and T. L. Meisenheimer, "An Improved Standard Total-Dose Test for CMOS Space Electronics," IEEE Trans. Nucl. Sei. 38, 1552 (1991).
35. E. W. Enlow, R. L. Pease, W. E. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of Advanced Bipolar Processes to Ionizing Radiation," IEEE Trans. Nucl. Sei. 38, 1342 (1991).
36. R. N. Nowlin, D. M. Fleetwood, R. D. Schrimpf, R. Pease, and W. Combs, "Hardness Assurance and Testing Issues for Bipolar/BiCMOS Devices," IEEE Trans. Nucl. Sei. 40, 1686 (1993).
37. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 397.
38. D. M. Fleetwood, W. L. Warren, J. R. Schwank, P. S. Winokur, M. R. Shaneyfelt, and L. C. Riewe, "Effects of Interface and Border Traps on MOS Postirradiation Annealing Response," IEEE Trans. Nucl. Sei. 42, 1698 (1995); D. M. Fleetwood, "Fast and Slow Border Traps in MOS Devices," Ibid. 43, 779 (1996).
39. J. D. Jackson, Classical Electrodynamics, 2nd Edition (Wiley, New York, 1975), pp. 54-83.
40. H. E. Boesch, Jr. and J. M. McGarrity, "Charge Yield and Dose Effects in MOS Capacitors at 80 K," IEEE Trans. Nucl. Sei. 23, 1520 (1976); H. E. Boesch, Jr. F. B. McLean, J. M. Benedetto, J. M. McGarrity, and W. E. Bailey, Ibid. M, 1191 (1986).
41. R. C. Hughes, "The Origin of Interfacial Charging in Irradiated Si3N4 Capacitors," J. Appl. Phys. 56, 1044 (1984); R. C. Hughes and C. H. Seager, "Hole Trapping, Recombination, and Space Charge in Irradiated Sandia Oxides," IEEE Trans. Nucl. Sei. 3. 0,4049(1983).
42. J. M. Benedetto and H. E. Boesch, Jr. , "The Relationship Between Co-60 and 10-keV X-ray Damage in MOS Devices," IEEE Trans. Nucl. Sei. 33, 1318 (1986).
43. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, "Charge Yield for 10-keV X-ray and Co-60 Irradiation of MOS Devices," IEEE Trans. Nucl. Sei. 38, 1187 (1991).
44. W. L. Warren, K. Vanheusden, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur, and R. A. B. Devine, "Over-Coordinated Oxygen Centers in SIMOX and Thermal Oxides," IEEE Trans. Nucl. Sei. 43, No. 6 (1996).
45. A. H. Johnston, C. I. Lee, and B. R. Rax, "Enhanced Damage in Bipolar Devices at Low Dose Rates: Effects at Very Low Dose Rates," IEEE Trans. Nucl. Sei. 43, No. 6 (1996).
46. J. F. Conley, P. M. Lenahan, and P. M. Roitman, "Evidence for a Deep Electron Trap and Charge Compensation in SIMOX Oxides," lEEE'Trans. Nucl. Sei. NS-39, 2114 (1992).