Analytical model for proton radiation effects in bipolar devices

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2643-2649

  Barnaby, H J ^a   Smith, S K ^a   Schrimpf, R D ^b   Fleetwood, D M ^b   Pease, R L ^c  

^a University of Arizona   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c RLP Research   (United States)

Author keywords

Bipolar junction transistors; Bulk lifetime ( ); Displacement damage; Ionization damage; Net positive oxide charge (NOX); Substrate pnp (SPNP); Surface recombination velocity (s0)

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; CORRELATION METHODS; DEFECTS; ELECTRIC CURRENTS; ELECTRON TRAPS; IONIZATION; MATHEMATICAL MODELS; NEUTRON IRRADIATION; PROTON IRRADIATION; SUBSTRATES; X RAY ANALYSIS;

CARRIER RECOMBINATIONS;

BIPOLAR TRANSISTORS;

EID: 0036947512     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805410     Document Type: Conference Paper

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