Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6, 1996, Pages 3032-3039

  Schmidt, D M ^a   Wu, A ^b   Schrimpf, R D ^b   Fleetwood, D M ^c   Pease, R L ^d  

^a ADVANCED MICRO DEVICES   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); IONIZATION OF SOLIDS; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS;

GAIN DEGRADATION;

BIPOLAR TRANSISTORS;

EID: 0030373995     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.556902     Document Type: Article

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