Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1989-2000

  Witczak, S C ^a   Schrimpf, R D ^b   Fleetwood, D M ^c   Galloway, K F ^d   Lacoe, R C ^e   Mayer, D C ^d   Puhl, J M ^a   Pease, R L ^b   Suehle, J S ^c  

^a AEROSPACE CORPORATION   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; ELECTRIC CURRENTS; IRRADIATION; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS; HARDNESS ASSURANCE TESTING; RADIATION RESPONSE;

BIPOLAR TRANSISTORS;

EID: 0031386208     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658978     Document Type: Article

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