Accelerated tests for simulating low dose rate gain degradation of lateral and substrate pnp bipolar junction transistors

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3151-3160

  Witczak, S C ^a   Schrimpf, R D ^b   Galloway, K F ^c   Fleetwood, D M ^b   Pease, R L ^a   Puhl, J M ^c   Schmidt, D M ^c   Combs, W E ^a   Suehle, J S ^a  

^a University of Arizona   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SUBSTRATES;

LOW DOSE RATE;

BIPOLAR TRANSISTORS;

EID: 0030370402     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556919     Document Type: Article

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