Implementation of total dose effects in the bipolar junction transistor gummel-poon model

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1922-1929

  Montagner, X ^a,d   Fouillat, P ^b   Briand, R ^c,d   Schrimpf, R D ^a   Touboul, A ^c,d   Galloway, K P ^a   Calvet, M C ^c,d   Calvel, P ^b,c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b VANDERBILT UNIVERSITY   (United States)

^c AEROSPATIALE   (France)

^d THALES ALENIA SPACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ERROR CORRECTION; GENETIC ALGORITHMS; OPTIMIZATION; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE MODELS;

BIPOLAR JUNCTION TRANSISTORS (BJT); GUMMEL POON MODEL; SOFTWARE PACKAGE SPICE;

BIPOLAR TRANSISTORS;

EID: 0031358693     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658963     Document Type: Article

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